Scientia et technica

Graphite Thin Films Production by Laser Ablation.

Henry Riascos Landázuri, Juan Marcos Marin, Juan David López Vargas, Juan Pablo Cuenca Vargas

Resumen


Graphite thin films on silicon substrate were synthesized by the fundamental and second harmonics of a Nd : YAG pulsed laser, varying the substrate temperature from 200°C to 500°C . The oxygen gas pressure was of 2x10-5 Torr for all thin films grown. The samples were characterized by Raman and UV-Vis spectroscopy. With Raman spectroscopy the vibrational modes D, G and 2D, were identified. A strong dependence of the Absorbance of samples with substrate temperature was observed. The nanostructure of sample grown at 500°C corresponding to graphene oxide. The average thick of thin films was of 65 nm and 40 nm for fundamental and second harmonics respectively.

Palabras clave


Laser Ablation, Graphite, Graphene Oxide, Raman spectroscopy, UV-Vis spectroscopy.

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DOI: http://dx.doi.org/10.22517/23447214.18771

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